MRAM-based architectures in Spintec
25th April 2018
10am,Claude Chappe (room TBC)
Non-Volatile Memories (NVMs) have gained traction in the last few years as they are expected to help mitigating the ever growing energy consumption due to leakage in advanced technology nodes. Among emerging NVM technologies, Magnetoresistive Random-Access Memory (MRAM) is considered to be one of the most promising as it reaches performance levels close to those of Static RAM (SRAM) with very high endurance, intrinsic immunity to radiations and good downsize scalability.
Spintec is a laboratory fully dedicated to spintronics research, aiming at bridging the gap between fundamental research and applications with expertise in fundamental physics as well as in device-oriented technologies. In particular, the design team focuses on the development of design tools for the hybrid CMOS/magnetic technology and the evaluation of hybrid non-volatile circuits (FPGA, processors, etc.).
This seminar will discuss ongoing research activities in Spintec with a focus on architecture and IC design.